Electrothermal Modeling of AlGaN/GaN Heterostructure Field Effect Transistors

Electrothermal Modeling of AlGaN/GaN Heterostructure Field Effect Transistors
by Nazlı Dönmezer
(Middle East Technical University, Department of Mechanical Engineering)
DATE : October 7, 2016 (Friday)
TIME : 14:00-15:00
Nitride-based semiconductors and materials have been promising candidates for wide variety of technological applications such as nitride based power electronics, satellite communication, and light    emitting diodes. AlGaN/GaN based Heterostructure Field Effect Transistors (HFETs), that are used in high power and frequency applications have been intensively used due to their high-efficiency    power switching and large current handling capabilities. In these devices the high power densities and localized heating form small, high temperature regions called hotspots. Analysis of the heat removal from hotspots and temperature control of the entire device is necessary for the reliable design of HFET devices. Due to the resolution limits of the current experimental characterization    techniques and the geometry of the device that limits the accurate temperature measurement, thermal simulations are necessary. The aim is to build an accurate yet efficient electro-thermal model for the analysis and improvement of HFETs.
Short Bio: Dr. Nazli Donmezer is an Assistant Professor in the Mechanical Engineering Department of Middle East Technical University. She received her PhD. from Woodruff School of Mechanical Engineering   at the Georgia Institute of Technology and her M.S. from Middle East   Technical University in 2013 and 2009 respectively. During her PhD  she  worked on the development of a multiscale model  to simulate the   thermal response of devices with nanometer sized hotspots under the   supervision of Dr. Samuel Graham. She was a recipient of the   Schlumberger "Faculty for the Future" (FFTF) scholarship during her   PhD. studies. Dr. Donmezer joined the faculty at METU in Fall 2014.   She is currently leading a research group  where the goal is to   characterize the electro-thermal behavior of  the nitride devices and materials.